The C_MIM module represents a series metal-insulator-metal capacitor (MIM-Capacitor) in coplanar line technique.
The width of capacitor and its distance to the ground are given in a line type addressed by C_LTYPC.
Presently, the C_MIM module is not able to calculate the steps which are made if different line types are used for C_LTYP1, C_LTYP1 and C_LTYPC. Therefore, if a step configuration is used for layout reasons, the effect of such discontinuities are not taken into account during the simulation.
The connected lines addressed by C_LTYP1 and C_LTYP2 must have different CEN_MET.
The index DIE_IDX is used for the selection of the desired dielectric layer in selected foundry. In case of DEFAULT foundry, two different dielectric layers are available (DIE_IDX =0 is not allowed). If DIE_IDX=1, the parameter die_h1, die_er1, die_td1, cap_l1 and cap_os1 are used.
The oversize of lower metal plate is defined by the keyword cap_os in selected foundry. Note, that the slot S in C_LTYPC must be greater than cap_os (Smin = cap_os +DL ).
Note that the effective length of the capacitive section is given by L-2*cap_l. Therefor L has to be greater than 2*cap_l.
If L1 in selected C_GRID are not set to -1 (auto sizing), the minimum value for L1 is:
L1min=max( W1+2*S1+2*GW1, W2+2*S2+2*GW2,WC+2*SC+2*GWC)