C_TECH

	C_TECH Data Item Technological data Definition (DEFAULT Foundry) Perameters Notes
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Technological Data Definition (DEFAULT Foundry)

In this data item, the process data of a so called DEFAULT foundry are stored. This is an arbitrary foundry and the parameter cab be modified by user.

Parameters

Parameter	Discreption	Range of Usage
die_h0	Height of dielectric for air bridges	5DL^<die_h0<0.2 DL^
die_er0	Relative permittivity of dielectric layer for air bridges	³ 1
die_td0	Dielectric loss factor of dielectric layer for bridges	> 0
cap_os1	Oversize of bottom metal-plate of MIM capacitors with dielectric layer	³ 0
cap_l1	Length of the connection region of MIM capacitors with dielectric layer 1	³ 0
die_h1	Height of dielectric layer 1	5DL^<die_h1<0.2 DL^
die_er1	Relative permittivity of dielectric layer1	³ 1
die_td1	Dielectric loss factor of dielectric layer 1	> 0
cap_os2	Oversize of bottom metal-plate of MIM capacitors with dielectric layer 2	³ 0
cap_l2	Length of the connection region of MIM capacitors with dielectric layer 2	³ 0
die_h2	Height of dielectric layer 2	5DL^<die_h2<0.2 DL^
die_er2	Relative permittivity of dielectric layer 2	³ 1
die_td2	Dielectric loss factor of dielectric layer 2	> 0
res_l	Length of the connection region for resistors	> 0
res_rs	Sheet resistivity of resistive layer (ohm/square)	> 0
t1	Thickness of metal level 1 (cond)	5DL^<t1<0.2 DL^
rho1	Resistivity of metal level 1 (cond)	> 0
t2	Thickness of metal level 2 (cond2)	5DL^<t2<0.2 DL^
rho2	Resistivity of metal level 2 (cond2)	> 0

Notes

In the DEFAULT foundry, there are two metal layers, three dielectric layers, and a resistive layer.
If only the DEFAULT foundry is available (standard packet of COPLAN for Libra), the only name for C_TECH allowed is "C_TECH_DEFAULT". Use of another name causes the simulator to abort!
The parameters die_h0, die_er0 and die_td0 represent the definition of dielectric layer witch is used in air bridges (C_AIRTYP) addressed by the parameter DIE_IDX. The use of these layer for C_MIM and C_CAPLIN is not allowed.
The parameters die_hn, die_ern, die_tdn, cap_osn and cpa_ln (n=1,2) represent the definition of dielectric layers used in capacitors (C_CAPLIN and C_MIM) addressed by the parameter DIE_IDX. For example if DIE_IDX in C_MIM is set to 1, a dielectric layer of thickness die_h1 and dielectric constant of die_er1 and loss tangent of die_td1 is used for the capacitor. In this case, cap_os1 is the oversize of the bottom plate and cap_l1 is the length of connection region. These two dielectric layers can also be used for air-bridges; however in this case the parameter cap_osn and cap_ln (n=1,2) are ignored.
The parameters res_l and res_rs represent the definition of resistive layers for resistor elements C_TFR and C_TFG addressed by the parameter RES_ IDX.
The parameters t1, rho1 and t2, rho2 represent the definition of metal layers addressed by CEN_MET, GDN_MET or LEVEL (see C_LINTYP, C_NL_TYP, C_IDC, C_RIND).
roh1 and roh2 are specific resistivity of metal layers 1 and 2 related to Gold. For perfect gold, this value is 1.
The value for metallization thickness tn (n=1,2) and dielectric height die_hn (n=0,1,2,...) does not depend on the grid size. However, for these two parameters, the ratio tn/DL and die_hn /DL should be between 0.2 and 5.0. Otherwise, the accuracy of the simulation can not be guaranteed.